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India’s first silicon carbide semiconductor facility in Bhubaneswar: Odisha approves incentive package for RIR

The Odisha Cabinet approved a customized incentive package for RIR Power Electronics Limited to establish India's first Silicon Carbide semiconductor manufacturing facility in Bhubaneswar, with an investment of Rs 618.60 crore, expected to create 750 jobs.

India’s first silicon carbide semiconductor facility in Bhubaneswar: Odisha approves incentive package

India’s first silicon carbide semiconductor facility in Bhubaneswar: Odisha approves incentive package

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The Odisha Cabinet on Wednesday approved a customized incentive package for RIR Power Electronics Limited (RIR) to establish India’s first Silicon Carbide (SiC) semiconductor manufacturing facility in Bhubaneswar. The total investment cost of the project is around Rs 618.60 crore and it will be implemented in two years.

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It is pertinent to mention here that the groundbreaking ceremony for the manufacturing facility was held on September 7, 2024, at the Electronic Manufacturing Cluster (EMC) Park in Infovalley, Bhubaneswar. 

The facility will focus on SiC-based devices, catering to electric vehicles (EV), renewable energy, railways and defence sectors and is expected to create 750 jobs.

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Also Read: Odisha to seek Rs 12L crore from 16th Finance Commission

As per the Odisha government, this will be India’s first compound semiconductor fab, significantly enhancing domestic manufacturing capabilities with high-value processes like epitaxial layer deposition and packaging.
RIR is India’s sole manufacturer of silicon-based power devices, serving clients like BHEL, ABB, and Indian Railways.

This project is poised to position Odisha as a leader in India’s semiconductor ecosystem, driving industrial growth, local supply chain development and skilling opportunities.

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Also Read: Odisha cabinet: 6794 primary schools to be upgraded as  model schools under GMAPV

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